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PD- 95238
IRGP30B120KD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Low VCE(on) Non Punch Through (NPT) Technology * Low Diode VF (1.76V Typical @ 25A & 25C) * 10 s Short Circuit Capability * Square RBSOA * Ultrasoft Diode Recovery Characteristics * Positive VCE(on) Temperature Coefficient * Extended Lead TO-247AD Package * Lead-Free
C
Motor Control Co-Pack IGBT
VCES = 1200V
G E
VCE(on) typ. = 2.28V
VGE = 15V, IC = 25A, 25C
N-channel n-channel
Benefits
* Benchmark Efficiency for Motor Control Applications * Rugged Transient Performance * Low EMI * Significantly Less Snubber Required * Excellent Current Sharing in Parallel Operation * Longer leads for Easier Mounting
TO-247AD
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.1) Continuous Collector Current (Fig.1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (Fig.2) Maximum Power Dissipation (Fig.2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw.
Max.
1200 60 30 120 120 30 120 20 300 120 -55 to + 150 300, (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m)
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt ZJC Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Transient Thermal Impedance Junction-to-Case (Fig.24)
Min.
--- --- --- --- ---
Typ.
--- --- 0.24 --- 6 (0.21)
Max.
0.42 0.83 --- 40 ---
Units
C/W
g (oz)
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7/27/04
IRGP30B120KD-EP
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES / Tj Temperature Coeff. of Breakdown Voltage
Min. 1200
Typ. +1.2 2.28 2.46 3.43 2.74 2.98 5.0 - 1.2 16.9 325 1.76 1.86 1.87 2.01
Collector-to-Emitter Saturation
VCE(on)
Voltage
VGE(th)
VGE(th) / Tj
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance
4.0 14.8
Max. Units V V/C 2.48 2.66 4.00 V 3.10 3.35 6.0 V 19.0 250 675 2000 2.06 2.17 2.18 2.40 100 S A
Conditions
VGE = 0V,Ic =250 A VGE = 0V, Ic = 1 mA ( 25 -125 oC ) IC = 25A, VGE = 15V IC = 30A, VGE = 15V IC = 60A, VGE = 15V IC = 25A, VGE = 15V, TJ = 125C IC = 30A, VGE = 15V, TJ = 125C VCE = VGE, IC = 250 A
o
Fig.
5, 6 7, 9 10 11
9 ,1 0 ,1 1 ,1 2
o mV/ C VCE = VGE, IC = 1 mA ( 25 -125 C )
gfe ICES
VCE = 50V, IC = 25A, PW=80s VGE = 0V,VCE = 1200V VGE = 0v, VCE = 1200V, TJ =125C VGE = 0v, VCE = 1200V, TJ =150C IC = 25A
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
V
IC = 30A IC = 25A, TJ = 125C IC = 30A, TJ = 125C
8
IGES
Gate-to-Emitter Leakage Current
nA
VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA
Total Gate charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-on Switching Loss Turn-off Switching Loss Total Switching Loss Turn - on delay time Rise time Turn - off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
Typ. 169 19 82 1066 1493 2559 1660 2118 3778 50 25 210 60 2200 210 85
Max. Units Conditions IC = 25A 254 29 nC VCC =600V VGE = 15V 123 IC = 25A, VCC = 600V 1250 1800 J VGE = 15V, Rg = 5, L =200H 3050 1856 2580 4436 65 35 230 75 ns J
TJ = 25 C, Energy losses include tail and diode reverse recovery
o
Fig.
23 CT 1
CT 4 WF1 WF2 13, 15 CT 4 WF1 & 2 14, 16 CT 4 WF1 WF2
Ic =25A, VCC=600V VGE = 15V, Rg = 5, L =200H
TJ = 125 C, Energy losses include tail and diode reverse recovery
o
Ic =25A, VCC=600V VGE = 15V, Rg = 5, L =200H TJ = 125oC, VGE = 0V
pF
VCC = 30V f = 1.0 MHz TJ =150oC, Ic = 120A
22
4 CT 2
Reverse bias safe operating area
FULL SQUARE
VCC = 1000V, VP = 1200V Rg = 5, VGE = +15V to 0 V TJ = 150 C VCC = 900V,VP = 1200V Rg = 5, VGE = +15V to 0 V TJ = 125oC VCC = 600V, Ic = 25A VGE = 15V, Rg = 5, L =200H
Measured 5 mm from the package.
o
CT 3 WF4
SCSOA Erec trr Irr Le
Short Circuit Safe Operating Area
10
---1820 300 34 13
---2400 38
s J ns A nH
Reverse recovery energy of the diode Diode Reverse recovery time Peak Reverse Recovery Current Internal Emitter Inductance
1 7 ,1 8 ,1 9 20, 21 CT 4 , WF3
2
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IRGP30B120KD-EP
Fig.1 - Maximum DC Collector Current vs. Case Temperature
70
Fig.2 - Power Dissipation vs. Case Temperature
320 280 240 200
60
50
(W) P
tot
(A)
40
160 120
C
30
I
20
80
10
40 0
0 0 40 80 120 160
0
40
80 T C (C)
120
160
T C (C)
Fig.3 - Forward SOA T C =25C; Tj < 150C 1000 PULSED
2s
Fig.4 - Reverse Bias SOA Tj = 150C, V GE = 15V 1000
100
10 s
100
100 s
(A)
10
1ms
I
1
10ms
DC
0.1 1 10 100 V CE (V) 1000 10000
I 10 1 1 10 100 V CE (V) 1000 10000
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C
C
(A)
3
IRGP30B120KD-EP
Fig.5 - Typical IGBT Output Characteristics Tj= -40C; tp=300s 60 55 50 45 40 (A)
60
V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8V
Fig.6 - Typical IGBT Output Characteristics Tj=25C; tp=300s
55 50 45 40
V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8V
(A)
C
35 30 25 20 15 10 5 0 0 1 2 3 4 V CE (V) 5 6
35 30 25 20 15 10 5 0 0 1 2 3 4 V CE (V) 5 6
C
I
Fig.7 - Typical IGBT Output Characteristics Tj=125C; tp=300s
60 55 50 45 40
V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8V
I
60 55 50 45 40 (A) 35 30 25 20 15 10 5 0
Fig.8 - Typical Diode Forward Characteristic tp=300s - 40C 25C 125C
(A)
C
35 30 25 20 15 10 5 0 0 1 2 3 4 5 6
I
I
F
0
1
V CE (V)
2 V F (V)
3
4
4
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IRGP30B120KD-EP
Fig.9 - Typical V CE vs V GE Tj= -40C
20 18 16 14
Fig.10 - Typical V CE vs V GE Tj= 25C
20 18 16 14 V CE ( V ) 12 10 8 6 4 2 0
(V)
12 10 8 6 4 2 0 6 8 10 12 14 16 18 20
I CE =10A I CE =25A I CE =50A
I CE =10A I CE =25A I CE =50A
V
CE
V GE (V)
6
8
10
12 14 V GE (V)
16
18
20
Fig.11 - Typical V CE vs V GE Tj= 125C 20 18 16 14 V CE ( V ) 12 10 8 6 4 2 0 6 8 10 12 14 V GE (V) 16 18 20 I CE =10A I CE =25A I CE =50A
Fig.12 - Typ. Transfer Characteristics V CE =20V; tp=20s
250 225 200 175 150 (A) 125 100 75 50 25 0 0 4 8 12 V GE (V) 16 20 Tj=125C Tj=25C Tj=25C Tj=125C
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I
C
5
IRGP30B120KD-EP
Fig.13 - Typical Energy Loss vs Ic Tj=125C; L=200H; V CE =600V; Rg=22 ; V GE =15V
8000 7000 6000
Eon
tdoff
Fig.14 - Typical Switching Time vs Ic Tj=125C; L=200H; V CE =600V; Rg=22 ;V GE =15V
1000
Eoff
tf
100
Energy (J)
5000
t (nS)
4000 3000 2000 1000 0 0 10 20 30 40 50 60
tr
tdon
10 0 10 20 30 40 50 60
I C (A)
Fig.15 - Typical Energy Loss vs Rg Tj=125C; L=200H; V CE =600V; I CE =25A; V GE =15V 3500 3300 3100 2900 Energy (uJ) 2700 2500 2300 2100 1900 1700 1500
0 5 10 15 20 25 30 35 40 45 50 55
I C (A)
Fig.16 - Typical Switching Time vs Rg Tj=125C; L=200H; V CE =600V; I CE =25A; V GE =15V 1000
Eon
tdoff
t (nS)
Eoff
100
tdon tr tf
10
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
Rg (ohms)
6
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IRGP30B120KD-EP
Fig.17 - Typical Diode I RR vs I F Tj=125C
45
Fig.18 - Typical Diode I RR vs Rg Tj=125C; I F =25A
45 40 35
40
35
Rg=5
30
30
IRR ( A )
25
Rg=10 Rg=22
20
15
10
Rg=51
I RR ( A )
25 20 15 10 5 0
5
0 0 10 20
I F (A)
30
40
50
60
0
5
10 15 20 25 30 35 40 45 50 55
Rg (ohms)
Fig.19 - Typical Diode I RR vs dI F /dt V CC =600V; V GE =15V I F =25A; Tj=125C
Fig.20 - Typical Diode Q RR V CC =600V; V GE =15V; Tj=125C 7000 6500
45 40 35 30 (A) 25
22 51
10
5 50A 40A 30A 25A 20A
Rg=5
6000 5500 QRR ( n C ) 5000 4500 4000 3500 3000 2500
I
RR
Rg=10
20 15 10 5 0 0 500 1000 dI F / dt (A/s) 1500
Rg=51 Rg=22
0
500
1000
1500
dI F / dt (A/s)
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IRGP30B120KD-EP
Fig.21 - Typ. Diode E rec vs. I F Tj=125C
2400 5 2200 10 22 51
2000
Energy (uJ)
1800
1600
1400
1200
1000
800 0 10 20
I F (A)
30
40
50
60
Fig.22 - Typical Capacitance vs V CE V GE =0V; f=1MHz
10000
Fig.23 - Typ. Gate Charge vs. V GE I C =25A; L=600H
16 14
600V 800V
C ies
12
CapacItance (pF)
1000
10
V GE ( V )
8 6
C oes
100
4
C res
2
10 0 20 40 60 80 100
0 0 40 80 120 160 200
V CE (V)
Q G , Total Gate Charge (nC)
8
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IRGP30B120KD-EP
Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case 10
1
D =0.5
0.2 0.1
0.1
0.05
P DM
0.02
t1 0.01
0.01
t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + T C
SINGLE PULSE
0.001 0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000
t 1 , Rectangular Pulse Duration (sec)
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IRGP30B120KD-EP
Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit
L
L DUT
0
VCC
80 V Rg
DUT
1000V
1K
Fig. CT.3 - S.C. SOA Circuit
Fig. CT.4 - Switching Loss Circuit
Driver
D C
diode clamp / DUT
L
900V
- 5V DUT / DRIVER
Rg
DUT
VCC
Fig. CT.5 - Resistive Load Circuit
R=
VCC ICM
DUT
Rg
VCC
10
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IRGP30B120KD-EP
Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125C using Fig. CT.4
800 40 700 35
Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125C using Fig. CT.4
900 800 700
TEST CURRENT
45 40 35 30 25 20 tr 15
10% test current
600 90% ICE 500
30
25
600 500
(V)
V CE ( V )
I CE ( A )
CE
tf 300 15
400 300
V
200 5% VCE 100 5% ICE
10
200
5% VCE
10 5 0
Eon Loss
5
100
0
0 Eoff Loss -100 -0.5
0 -100 4.0 4.1 4.2 4.3 4.4 4.5 t I me (s)
-5 0.0 0.5 1.0 t I me (s) 1.5 2.0 2.5
-5
Fig. WF.3 - Typ. Diode Recovery Waveform @ Tj=125C using Fig. CT.4
0 30
Fig. WF.4 - Typ. S.C. Waveform @ TC=150C using Fig. CT.3
1200 250
-200 QRR tRR -400
20
1000
200
10
800 V CE ( V )
150
V C E( V )
I C E( A )
ICE ( A )
400
20
90% test current
-600 10% Peak IRR Peak IRR
0
600
100
-800
-10
400
50
-1000
-20
200
0
-1200 -0.5
-30 0.0 0.5 t I me (S) 1.0
0 -10 0 10 t i me (s) 20 30
-50
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ICE ( A )
11
IRGP30B120KD-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
EXAMPLE: THIS IS AN IRGP30B120KD-E WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" Note: "P" in as s embly line pos ition indicates "Lead-Free"
PART NUMBER INTERNATIONAL RECTIF IER LOGO
56
035H 57
AS SEMBLY LOT CODE
DATE CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04
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